Material for bismuth substituted garnet thick film and a...

Details Material for bismuth substituted garnet thick film and a... Material for bismuth substituted garnet thick film and a...

C - Chemistry, Metallurgy

30

B

C30B 29/28 (2006.01) G02B 1/00 (2006.01) G02F 1/09 (2006.01) H01F 10/24 (2006.01) H01F 41/28 (2006.01)

Patent

CA 2349871

A material for a bismuth substituted garnet thick film comprising Gd, Yb, Bi, Fe and Al as the main ingredient grown by a liquid phase growing method on a garnet substrate in which the composition of the garnet thickness is represented by the general formula: Gd3-x-y Yb x Bi y Fe5-zAl2O12 (0 < x ~ 0.5, 0.85 ~ y ~ 1.55 and 0.15 ~ z ~ 0.65), and each of boron oxide (B2O3) and lead oxide (PbO) is contained by from 0 to 4.0 wt% (not including 0) in the garnet thick film.

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