Material vapor deposition technique

Details Material vapor deposition technique Material vapor deposition technique

C - Chemistry, Metallurgy

23

C

117/81

C23C 16/44 (2006.01) C23C 16/455 (2006.01)

Patent

CA 1226766

- 19 - MATERIAL VAPOR DEPOSITION TECHNIQUE Abstract Deposited layers are advantageously obtained by utilizing a specific vapor deposition procedure. In this procedure, a substrate is positioned a relatively short distance from the source of a gas flow capable of producing the desired deposition. This gas flow is directed so that it contacts an interior region of the substrate and moves from the initial contact point to a point on the periphery of the substrate. Exemplary of such gas flow configurations is the positioning of a substrate at a small distance above a fused quartz fruit through which the deposition gas flow is directed.

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