Mbe device and method for the operation thereof

Details Mbe device and method for the operation thereof Mbe device and method for the operation thereof

C - Chemistry, Metallurgy

30

B

C30B 25/14 (2006.01) C30B 29/38 (2006.01)

Patent

CA 2643960

A molecular beam epitaxy (MBE) device (100) which is designed for the reactive deposition of a group III nitride compound semiconductor comprises a vacuum chamber (10) which comprises at least one molecular beam source (11) and at least one injector (12) designed to inject ammonia into the vacuum chamber (10), a first cold trap device (20) comprising at least one cold trap (21, 22) designed to condense excess ammonia, a pump device (30) comprising at least one pump (31, 33, 35) designed to evacuate the vacuum chamber (10), and a barrier device (40), by means of which the first cold trap device (20) can be separated from the vacuum chamber (10). A method for operating an MBE device is also described.

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