C - Chemistry – Metallurgy – 12 – N
Patent
C - Chemistry, Metallurgy
12
N
C12N 15/11 (2006.01) A61K 31/7088 (2006.01) A61K 31/7115 (2006.01) A61K 48/00 (2006.01)
Patent
CA 2652408
In the present invention means and method are provided for optimising exon- skipping using exon-internal AON. We show that skipping efficiencies are improved by targeting putative splicing regulatory sequences (ESEs) within an exon. Such double targeting may be particularly useful for exons with which efficient skipping was difficult to obtain prior to the invention.
Dans la présente invention, des moyens et procédés sont proposés pour optimiser le saut d'exon en utilisant un AON interne à l'exon. Nous montrons que les efficacités de saut sont améliorées en ciblant les séquences régulatrices d'épissage putatives (ESE) dans un exon. Ce double ciblage peut être particulièrement utile pour les exons avec lesquels un saut efficace s'est avéré difficile à obtenir avant l'invention.
Aartsma-Rus Annemieke
Van Deutekom Judith Christina Theodora
Van Ommen Garrit-Jan Boudewijn
Academisch Ziekenhuis Leiden
Bereskin & Parr Llp/s.e.n.c.r.l.,s.r.l.
LandOfFree
Means and method for inducing exon-skipping does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Means and method for inducing exon-skipping, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Means and method for inducing exon-skipping will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1829859