Member for semiconductor device using an aluminum nitride...

Details Member for semiconductor device using an aluminum nitride... Member for semiconductor device using an aluminum nitride...

H - Electricity

01

L

H01L 29/00 (2006.01) C04B 41/52 (2006.01) H01L 21/02 (2006.01) H01L 23/498 (2006.01) H05K 3/38 (2006.01)

Patent

CA 2196641

A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000°C and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

Un composant très fiable pour un dispositif à semi-conducteur dans lequel une couche de métallisation à point de fusion élevé constituée principalement d'un métal à point de fusion élevé tel que le W et/ou le Mo et une couche de métal intermédiaire ayant un point de fusion qui ne dépasse pas 1 000 °C et qui est constituée principalement d'au moins l'un des métaux Ni, Cu et Fe, sont produites sur un substrat d'Al dans cet ordre, et une couche conductrice constituée principalement de cuivre est fixée directement à la couche de métal intermédiaire sans soudure. Un élément semi-conducteur ou un élément similaire est monté sur le composant pour dispositif à semi-conducteur, ce qui donne un dispositif à semi-conducteur. La couche de totalisation est formée sur un substrat de nitrure d'aluminium par métallisation à postcuisson ou à cocuisson.

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