Memory cell and method of forming a magnetic tunnel junction...

Details Memory cell and method of forming a magnetic tunnel junction... Memory cell and method of forming a magnetic tunnel junction...

H - Electricity

01

L

H01L 43/08 (2006.01)

Patent

CA 2711305

A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.

L'invention concerne une mémoire comprenant une cellule de mémoire et un procédé de production de la cellule de mémoire. La mémoire comprend un substrat dans un premier plan. On aménage une première connexion métallique s'étendant dans un deuxième plan, le deuxième plan étant sensiblement perpendiculaire au premier plan. On aménage également une jonction magnétique à effet tunnel (MTJ) dotée d'une première couche couplée à la connexion métallique de telle sorte que la première couche de la MTJ soit orientée le long du deuxième plan.

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