G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.1
G11C 11/34 (2006.01) G11C 11/411 (2006.01) H01L 27/10 (2006.01) H01L 27/102 (2006.01)
Patent
CA 1152646
ABSTRACT A memory cell, destined in particular to be integrated in a static memory in large numbers, comprising a semiconductor body having two transistors with cross-coupled base and collector regions. A load-element is formed by p-n diodes of which at least one of the anode and cathode regions consist of polycrystalline silicon. The collector regions of the transistors are conduct- ively connected to those regions of the diodes which are of the same conductivity type as the collector regions.
342353
Hart Cornelis M.
Lohstroh Jan
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
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