Memory cell for a static memory and static memory comprising...

Details Memory cell for a static memory and static memory comprising... Memory cell for a static memory and static memory comprising...

G - Physics

11

C

352/82.1

G11C 11/34 (2006.01) G11C 11/411 (2006.01) H01L 27/10 (2006.01) H01L 27/102 (2006.01)

Patent

CA 1152646

ABSTRACT A memory cell, destined in particular to be integrated in a static memory in large numbers, comprising a semiconductor body having two transistors with cross-coupled base and collector regions. A load-element is formed by p-n diodes of which at least one of the anode and cathode regions consist of polycrystalline silicon. The collector regions of the transistors are conduct- ively connected to those regions of the diodes which are of the same conductivity type as the collector regions.

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