Memory cell having an electric field programmable storage...

Details Memory cell having an electric field programmable storage... Memory cell having an electric field programmable storage...

G - Physics

11

C

G11C 11/40 (2006.01) G11C 11/56 (2006.01)

Patent

CA 2500937

Disclosed is a memory cell having an access transistor and an electric field programmable bi-stable element. The access transistor may be a (N-channel or P- channel) MOSFET transistor having a gate, source or drain region coupled to the electric field programmable bi-stable or multi-stable element (hereinafter collectively, "bi- stable element" unless expressly indicated otherwise). The access transistor facilitates selective and controllable programming and reading of the electric field programmable bi-stable element. Also disclosed is a plurality of memory cells, each having a unique, different and/or distinct electric field programmable bi-stable element and a common access transistor and a common access transistor. In yet another aspect, a differential memory cell having a plurality of memory cells configured to store complementary data states is disclosed. The differential memory cell includes first memory cell and second memory cell wherein the first memory cell maintains a complementary state relative to second memory cell. The first and second memory cells include a common access transistor and unique, different and/or distinct electric field programmable bi-stable element, or each includes an access transistor and an electric field programmable bi-stable element. Finally, a complementary memory cell having an N-channel type memory cell (an N-channel access transistor and an electric field programmable bi-stable element) and a P-channel type memory cell (a P-channel access transistor and an electric field programmable bi-stable element) is disclosed.

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