G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.3
G11C 11/08 (2006.01) G05F 1/577 (2006.01) G05F 3/20 (2006.01) G11C 5/14 (2006.01) G11C 11/4074 (2006.01) H01L 27/02 (2006.01)
Patent
CA 1101551
Abstract of the Disclosure A memory circuit for use in a video signal processing circuit and, more particularly, an MOS-IC memory circuit capable of frame-by-frame storage of a video signal is disclosed. The memory circuit is provided with a pro- tection circuit preventing the memory from being broken by an undesirable sequence of the main and substrate voltages or by an abnormal substrate volt- age. The memory circuit includes first and second voltage input terminals to which first and second voltage are applied. A comparator generates a control signal when the voltage at the second input terminal is below a given level. The memory circuit operates in response to the first and second voltages and a switching circuit cuts off the first voltage when the control signal is generated. Where an MOS-IC chip is used there are a plurality of memory elements and the first and second voltages correspond to main and substrate voltages, respectively. If all the substrate voltage input terminals are wired by a single conductor passing sequentially through the terminals a single protection circuit can be used for all the memory elements.
271325
Nippon Electric Co. Ltd.
Smart & Biggar
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