Memory device

Details Memory device Memory device

G - Physics

11

C

356/198

G11C 8/00 (2006.01) G11C 7/00 (2006.01) G11C 17/00 (2006.01) G11C 17/06 (2006.01)

Patent

CA 1216376

ABSTRACT OF THE DISCLOSURE Memory device A method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states is provided. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state.

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