Memory device using thin film transistors having memory...

Details Memory device using thin film transistors having memory... Memory device using thin film transistors having memory...

G - Physics

11

C

356/23

G11C 11/40 (2006.01) H01L 27/115 (2006.01)

Patent

CA 2001692

Abstract of the Disclosure A memory device includes a memory element composed of a first thin film transistor having a memory func- tion, and a select element composed of a second thin film transistor for selecting the memory element. A gate insulation film of the first thin film transistor has a charge storage function. A gate insulation film of the second thin film transistor does not have any charge storage function. If a plurality of the memory devices are arranged in matrix form, this configuration can be used as E2PROM. By forming the first and second thin film transistors simultaneously, it is possible to form the first and second thin film transistors easily in the simple manufacturing steps.

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