Memory element

C - Chemistry – Metallurgy – 22 – F

Patent

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13/6

C22F 1/00 (2006.01) C21D 10/00 (2006.01) C22F 3/00 (2006.01)

Patent

CA 1306328

Abstract of the Disclosure A memory element made of a shape-memory alloy includes lead-attachment and shape-memory portions and a partition interconnecting such portions. The lead-attachment and shape-memory portions are comprised of characteristic internal structures, while the partition is comprised of an internal structure dissimilar to the characteristic internal structure of at least one of the lead-attachment and shape-memory portions. Shape-memory effect characteristics of the shape-memory portion are preserved to maintain the memory function of the memory element by configuring the dissimilar internal structure to block transmigration from the lead-attachment to the shape-memory portions of selected contaminant material existing in the lead-attachment portion. The partition functions as a contaminant filter to control the concentration of contaminant material in the shape-memory portion, thereby enhancing the durability of the memory element. A method is disclosed of altering the first crystalline structure of an uncontaminated memory element to provide the dissimilar, contaminant migration-blocking, internal structure.

578782

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