Memory element with energy control mechanism

Details Memory element with energy control mechanism Memory element with energy control mechanism

G - Physics

11

C

G11C 16/02 (2006.01) G11C 11/56 (2006.01) H01L 45/00 (2006.01)

Patent

CA 2269857

An electrically operated, directly overwritable memory element (42) comprising a volume of memory material (36) having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased value. The memory element includes resistive layers (31, 41) for controlling the distribution of electrical energy within the memory material, heating layers (34, 38) for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.

Elément de mémoire (42), électrique et directement réinscriptible comprenant un volume de matériau de mémoire (36) ayant au moins deux valeurs de résistance électrique. Le volume de matériau de mémoire peut correspondre à une des valeurs de résistance en réponse à un signal d'entrée électrique sans nécessairement correspondre à une valeur de départ ou effacée. L'élément de mémoire comprend des couches résistives (31, 41) pour la commande de la répartition de l'énergie électrique au sein du matériau de mémoire, et des couches chauffantes (34, 38) pour le transfert de l'énergie thermique dans le matériau de mémoire, et des couches d'isolation thermique pour la réduction de la perte d'énergie thermique du matériau de mémoire.

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