G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/18 (2006.01) G11C 7/02 (2006.01) G11C 7/04 (2006.01) G11C 11/00 (2006.01) G11C 11/15 (2006.01) G11C 11/16 (2006.01)
Patent
CA 2481583
A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region (20) includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell (50) via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
L'invention concerne un dispositif de stockage mémoire comprenant une cellule de stockage à région magnétique changeable. La région magnétique changeable (20) comprend un matériau dont l'état de magnétisation est sensible à un changement de température. Le dispositif de stockage mémoire comporte aussi un élément de chauffage. L'élément de chauffage est disposé à proximité de la cellule de stockage afin de changer sélectivement la température de la région magnétique de la cellule de stockage. Grâce au chauffage de la cellule de stockage (50) au moyen de l'élément de chauffage, par opposition au chauffage de la cellule de stockage par une application directe de courant à la cellule, on obtient plus de flexibilité dans la fabrication de cellule de stockage.
Abraham David William
Trouilloud Philip Louis
International Business Machines Corporation
Wang Peter
LandOfFree
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