Memory with redundant rows and columns

Details Memory with redundant rows and columns Memory with redundant rows and columns

G - Physics

11

C

356/128, 352/82

G11C 11/40 (2006.01) G11C 29/00 (2006.01)

Patent

CA 1151294

18. ORGANIZATION FOR DYNAMIC RANDOM ACCESS MEMORY Abstract of the Disclosure An MOS dynamic random access memory (RAM) includes an array of memory cells arranged in rows and columns. The array is divided into two or more sub-arrays (1001, 1002). In an operating cycle where a cell is being accessed for reading and/or writing, only the sub-array containing the accessed cell is fully selected while the other sub-arrays are partially selected. A fully selected sub-array is one in which both a row and a column are selected, whereas in a partially selected sub-array, only a row is selected. In the partially selected sub- array where only refreshing of the cells in the selected row takes place, the column (1003, 1004) decoders and drivers remain inactive throughout the memory cycle.

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