Mesa undercutting semiconductor fabrication technique

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H01L 21/00 (2006.01) H01L 21/306 (2006.01) H01L 21/76 (2006.01) H01L 21/764 (2006.01) H01S 5/227 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1321268

ABSTRACT OF THE DISCLOSURE A method of undercutting mesa structures in which the lateral extent of the undercut is determined by a prior fabrication stage in which channels (5, 6) are etched and then infilled with a different material. The mesa is formed over the channels (5, 6) and a selective etch is used to undercut the mesa, the extent of the undercut (11) being limited by the location of the infilled channels (5, 6). For mechanical stability and insulation the undercuts (11) are filled or partly filled with dielectric (10).

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