Mesfet transistor with air layer between gate electrode...

Details Mesfet transistor with air layer between gate electrode... Mesfet transistor with air layer between gate electrode...

H - Electricity

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356/149

H01L 29/80 (2006.01) H01L 21/38 (2006.01) H01L 23/48 (2006.01) H01L 29/64 (1985.01) H01L 29/52 (1985.01)

Patent

CA 1266132

- 1 - TITLE MESFET TRANSISTOR WITH AIR LAYER BETWEEN THE CONNECTIONS OF THE GATE ELECTRODE AND THE SUBSTRATE AND THE RESPECTIVE FABRICATION PROCESS APPLICANT TELETTRA-Telefonia Elettronica e Radio S.p.A. INVENTOR Giampiero DONZELLI ABSTRACT In the MESFET of the invention the gate has the shape of a continuous sheet which bypasses a portion of the source and creates an air layer between its connection.

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