Mesh gate v-mos power fet

Details Mesh gate v-mos power fet Mesh gate v-mos power fet

H - Electricity

01

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356/73

H01L 21/46 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1154543

MESH GATE V-MOS POWER FET ABSTRACT OF THE INVENTION A power, V-grooved MOSFET having V-grooves extending in two orthogonal dimensions, thereby forming a semi-continuous mesh grid configuration which maximizes the periphery of the MOSFET channels for a given area of silicon, thus providing higher output current and lower "on resistance" for a given area than a conventional, interdigitated V-MOS power transistor having V-grooves running in only one dimension. -1-

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