C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.1, 204/91
C23C 14/02 (2006.01) C08J 7/06 (2006.01) C08J 7/18 (2006.01) C23C 14/20 (2006.01)
Patent
CA 1292965
Y09-85-014 ABSTRACT OF THE DISCLOSURE A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Beams of low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000eV, while the energy of the incident photons is about 0.2 - 500eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperature or elevated temperatures are suitable.
507433
Clabes Joachim Gerhard
Hahn Peter Otto
Ho Paul Siu-Chung
Lefakis Haralambos
Rubloff Gary Wayne
International Business Machines Corporation
Rosen Arnold
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