Metal-ceramic structure with intermediate high temperature...

Details Metal-ceramic structure with intermediate high temperature... Metal-ceramic structure with intermediate high temperature...

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B32B 18/00 (2006.01) B32B 15/04 (2006.01) C04B 37/02 (2006.01) F28F 21/04 (2006.01)

Patent

CA 2009600

RD 17,386 METAL-CERAMIC STRUCTURE WITH INTERMEDIATE HIGH TEMPERATURE REACTION BARRIER LAYER ABSTRACT A Si - SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate.

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