Metal complex source reagents for chemical vapor deposition

C - Chemistry – Metallurgy – 07 – F

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C07F 9/00 (2006.01) C07F 1/00 (2006.01) C07F 3/00 (2006.01) C07F 5/00 (2006.01) C07F 7/00 (2006.01) C07F 11/00 (2006.01) C07F 15/00 (2006.01) C07F 17/00 (2006.01) C07F 19/00 (2006.01) C23C 16/30 (2006.01) C23C 16/40 (2006.01) H01B 12/00 (2006.01)

Patent

CA 2223677

A metalorganic complex of the formula MAYX, wherein M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAy with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.- ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.

Complexe organométallique de formule MA¿Y?X où M est un métal à valence y; A est un ligand organique monodenté ou multidenté coordonné à M, ce qui permet de réaliser la complexion de MA¿y? avec X; y est un entier valant 2, 3 ou 4; chacun des ligands A peut être le même ou différent; et X est un ligand monodenté ou multidenté coordonné à M et contenant un ou plusieurs atomes indépendamment choisis dans le groupe constitué d'atomes des éléments C, N, H, S, O et F. Le métal M peut être choisi dans le groupe constitué par Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo et W. A peut être choisi dans le groupe constitué de .beta.-dicétonates et de leurs analogues soufrés et azotés, de .beta.-cétoesters et de leurs analogues soufrés et azotés, de cyclopentadiényles, d'alkyles, de perfluoroalkyles, d'alcoxydes, de perfluoroalcoxydes et de bases de Schiff. X peut, par exemple, comporter un ligand tel que le tétraglyme, le tétrahydrofurane, la bipyridine, l'éther couronne ou le thioéther.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Metal complex source reagents for chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal complex source reagents for chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal complex source reagents for chemical vapor deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1584103

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.