Metal insulation structure and liquid crystal display device

Details Metal insulation structure and liquid crystal display device Metal insulation structure and liquid crystal display device

G - Physics

02

F

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G02F 1/133 (2006.01) G02F 1/1362 (2006.01) G02F 1/1368 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1304807

ABSTRACT In anodic oxidation, using a conversion voltage as high as 100 volts, the region of anodizable metal layer covered with a vapor-grown insulation layer is not anodized. It is believed that because the vapor-grown insulation layer is dense and has high dielectric strength and small leakage current, the layer functions as a protective mask even when a conversion voltage as high as 100 volts is impressed. A metal insulation structure as taught in this disclosure has vapor-grown insulation layers having apertures, depsoited on an anodizable metal layer, and these vapor-grown insulation layers act as protective masks against anodic oxidation, anodized layers formed by converting at least the surface areas of said metal layers can be limited to an area of metal layers locating in the apertures of the vapor-grown insulation layers. JA9-88-001

592101

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