G - Physics – 02 – F
Patent
G - Physics
02
F
345/8
G02F 1/133 (2006.01) G02F 1/1362 (2006.01) G02F 1/1368 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01)
Patent
CA 1304807
ABSTRACT In anodic oxidation, using a conversion voltage as high as 100 volts, the region of anodizable metal layer covered with a vapor-grown insulation layer is not anodized. It is believed that because the vapor-grown insulation layer is dense and has high dielectric strength and small leakage current, the layer functions as a protective mask even when a conversion voltage as high as 100 volts is impressed. A metal insulation structure as taught in this disclosure has vapor-grown insulation layers having apertures, depsoited on an anodizable metal layer, and these vapor-grown insulation layers act as protective masks against anodic oxidation, anodized layers formed by converting at least the surface areas of said metal layers can be limited to an area of metal layers locating in the apertures of the vapor-grown insulation layers. JA9-88-001
592101
Furuta Kaoru
Yoshida Toshihiko
International Business Machines Corporation
Kerr Alexander
LandOfFree
Metal insulation structure and liquid crystal display device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal insulation structure and liquid crystal display device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal insulation structure and liquid crystal display device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1215703