Metal insulator semiconductor field effect device

Details Metal insulator semiconductor field effect device Metal insulator semiconductor field effect device

H - Electricity

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H01L 29/34 (2006.01) H01L 21/00 (2006.01) H01L 29/00 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1044377

ABSTRACT OF THE DISCLOSURE A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.

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