Metal layer pattern forming method

Details Metal layer pattern forming method Metal layer pattern forming method

H - Electricity

01

L

H01L 21/70 (2006.01) H01L 21/027 (2006.01) H01L 21/768 (2006.01)

Patent

CA 2177244

Disclosed is a metal layer pattern forming method which easily allows lift-off. The thickness of the photoresist layer is not less than double the thickness of the metal layer, and the maximum temperature that the surface of the substrate to be processed attains ranges from 100°C to 150°C. Through appropriate improvement of the quality of the photoresist layer, bonding to the background is prevented and the lift-off is facilitated.

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