C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
31/106, 356/137,
C04B 35/00 (2006.01) C30B 29/22 (2006.01) H01L 23/12 (2006.01)
Patent
CA 2000626
A metal oxide dielectric dense body, comprising (I) grains having a predominant crystalline phase (a) a primary metal oxide selected from the group consisting of silicon and magnesium oxide and (b) optionally a secondary metal oxide selected from the group consisting of aluminum and zinc oxide and (II) between about 1 and about 20 atom % bismuth, vanadium, or boron oxide or combinations thereof, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth, vanadium, boron, silicon, magnesium, aluminum, and zinc. The dense body has a density which is at least 95% of theoretical.
Dupon Ryan W.
Musolf Douglas J.
Tanous Adam C.
Thompson Mark S.
Wiseman Gary H.
Dupon Ryan W.
Marks & Clerk
Musolf Douglas J.
Raychem Corporation
Tanous Adam C.
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