Metal oxide semiconductor field-effect transistor formed in...

Details Metal oxide semiconductor field-effect transistor formed in... Metal oxide semiconductor field-effect transistor formed in...

H - Electricity

01

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356/149

H01L 21/265 (2006.01) H01L 29/167 (2006.01) H01L 29/24 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1313571

METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FORMED IN SILICON CARBIDE Abstract The present invention comprises a meal- oxide-semiconductor field-effect transistor (MOSFET) formed in silicon carbide. The doped source and doped drain are formed by high temperature ion implantation of dopant ions into the silicon carbide.

581146

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