Metal oxide semiconductor structure

Details Metal oxide semiconductor structure Metal oxide semiconductor structure

H - Electricity

01

L

328/115, 356/171

H01L 29/66 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)

Patent

CA 1323942

ABSTRACT A semiconductor structure and method of operation of said structure. The structure comprises a conducting back gate with a back oxide thereon, a silicon film of one conducting type provided with a recess in which a semiconducting material is provided, a front oxide is provided to the region of the other conducting type and a conducting front gate is provided to said front oxide. The method of operating said structure comprises the steps of cooling the structure to a temperature below 300K and preferably between 4K and 77K, and applying a voltage to the back gate in the form of pulses.

615003

Affiliated with

Also associated with

Rating

Metal oxide semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1258421