H - Electricity – 01 – L
Patent
H - Electricity
01
L
328/115, 356/171
H01L 29/66 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01)
Patent
CA 1323942
ABSTRACT A semiconductor structure and method of operation of said structure. The structure comprises a conducting back gate with a back oxide thereon, a silicon film of one conducting type provided with a recess in which a semiconducting material is provided, a front oxide is provided to the region of the other conducting type and a conducting front gate is provided to said front oxide. The method of operating said structure comprises the steps of cooling the structure to a temperature below 300K and preferably between 4K and 77K, and applying a voltage to the back gate in the form of pulses.
615003
Fetherstonhaugh & Co.
Interuniversitair Micro-Elektronica Centrum Vzw
Tack Marnix R. A.
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