Metal oxide varistor with improved electrical properties

Details Metal oxide varistor with improved electrical properties Metal oxide varistor with improved electrical properties

H - Electricity

01

C

356/114

H01C 7/10 (2006.01) H01C 7/112 (2006.01)

Patent

CA 1058327

ABSTRACT OF THE DISCLOSURE Disclosed is a metal oxide varistor body and a method for manufacturing the same. Conventional manufacturing techniques through sintering are utilized on any metal oxide varistor formulation which includes bismuth oxide. Following sintering, the devices, are heat treated at a temperature between 750°C and 1200°C for a time in excess of about 10 hours to cause the bismuth oxide to substantially completely convert to a body centered cubic phase. The presence of the body centered cubic bismuth oxide increases the alpha of the devices and substantially lowers the leakage current.

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