Metal semiconductor contracts for high frequency devices

Details Metal semiconductor contracts for high frequency devices Metal semiconductor contracts for high frequency devices

H - Electricity

01

L

356/166

H01L 29/40 (2006.01) H01L 21/60 (2006.01)

Patent

CA 1068012

\ ABSTRACT: According to the invention an insulating layer is provided in the form of at least one island on a semi- conductor substrate of one conductivity type, a metal mask- ing layer is then grown electrolytically on the parts of the semiconductor surface not covered by the island until it extends over the edge of the island partly over the insulating layer and does not cover a small surface part of the island, that the insulating layer is then removed at the area of the said small surface part by an ion bombardment so as to form a window, the masking layer is then removed, at most only partly, and the masking layer is then removed entirely and a rectifying metal contact layer is provided. Part of the semiconductor surface not present below the island, may be covered electrolytically by an electrode layer which forms a non-rectifying contact on the semi-con- ductor surface.

262719

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