Metal-semiconductor field-effect transistor formed in...

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H - Electricity

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L

356/149

H01L 29/76 (2006.01) H01L 21/335 (2006.01)

Patent

CA 1312148

METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FORMED IN SILICON CARBIDE Abstract The invention comprises a metal-semiconductor field-effect transistor (MESFET) formed upon silicon carbide. The transistor exhibits MESFET properties at temperatures of at least 600 K.

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