H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/02 (2006.01) H01L 31/028 (2006.01) H01L 31/07 (2006.01) H01L 31/108 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2161161
MSM-photodetectors are produced using implanted n-type Si and interdigitated electrodes deposited on the implanted surface. The implantation process decreases the carrier lifetime by several orders of magnitude. By implanting silicon with fluorine or oxygen, the bandwidth is increased relatively to unimplanted MSM photodetectors. Exemplary implanted photodetectors exhibited 3-dB bandwidths which were faster by an order of magnitude compared to their unimplanted counterparts. The detectors are thus compatible with multi-gigabit per second operation and monolithic integration with silicon electronics.
Dutta Niloy Kumar
Jacobson Dale Conrad
Nichols Doyle Thomas
At&t Corp.
Kirby Eades Gale Baker
LandOfFree
Metal semiconductor metal photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal semiconductor metal photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal semiconductor metal photodetectors will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1792806