Metal silicide conduction pattern

Details Metal silicide conduction pattern Metal silicide conduction pattern

H - Electricity

01

L

356/73

H01L 21/28 (2006.01) C30B 35/00 (2006.01) H01L 29/49 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1055618

ADSTRACT: A method of manufacturing a metal silicide pattern with respect to which two electrode zones are to be provided in a self-registering manner. According to the invention the pattern is provided in the form of a layer of polycrystalline silicon and, by selective oxidation and masking, only the upper surface of the pattern is exposed to the silicide formation so that passivation problems and shortcircuit are avoided. The use of sillicides which cannot withstand high temperatures is also possible. -26-

261160

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