Metallic base semiconductor device

Details Metallic base semiconductor device Metallic base semiconductor device

H - Electricity

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H01L 23/14 (2006.01) H01L 23/04 (2006.01) H01L 23/36 (2006.01) H01L 23/498 (2006.01)

Patent

CA 1307053

Abstract: A silicon substrate having a thin film circuit layer formed on its surface is laid on a metallic base, and a semiconductor chip made of a compound semiconductor such as gallium arsenide is disposed in a hole defined in the central portion of the silicon substrate with the semiconductor chip fixed directly on the metallic base. The connecting terminals of the chip are connected to the thin film circuit layer by wires. The heat generated in the semiconductor chip can be transmitted to the metallic base so that such heat is effectively dissipated. The resulting device is thus capable of having a high packing density and good operating characteristics at high frequencies.

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