Metallization for semiconductor devices

Details Metallization for semiconductor devices Metallization for semiconductor devices

H - Electricity

01

L

117/83

H01L 23/48 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1334158

A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is desirably tungsten.

543156

Affiliated with

Also associated with

Rating

Metallization for semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metallization for semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metallization for semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1281878