Metallized semiconductor device including an interface layer

Details Metallized semiconductor device including an interface layer Metallized semiconductor device including an interface layer

H - Electricity

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356/160

H01L 23/48 (2006.01) H01L 21/768 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1258718

- 9 - METALLIZED SEMICONDUCTOR DEVICE INCLUDING AN INTERFACE LAYER Abstract Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effectively serve to minimize interdiffusion during device manufacture without undue increase in electrical contact resistance during device operation.

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