Metalorganic chemical vapor depositing growth of group ii-vi...

Details Metalorganic chemical vapor depositing growth of group ii-vi... Metalorganic chemical vapor depositing growth of group ii-vi...

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 29/48 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1319587

Abstract of the Disclosure A method for growing a Group II-VI epitaxial layer over a substrate is described. The method includes the steps of directing a plurality of vapor flows towards the substrate, including a Group II organic vapor, a Group VI organic vapor, and a Group II elemental mercury vapor. At least one of the Group II organic vapor and Group VI organic vapor has organic groups which sterically repulse the second one of the Group II and Group VI organic vapors or which provide electron transfer to the Group II atom or electron withdrawal from the Group VI atom. With the particular arrangements described, it is believed that substantially independent pyrolsis of the Group II organic vapor is provided over the growth region of the substrate, and accordingly, Group II depletions such as cadmium depletion in the epitaxial films provided over the substrate is substantially reduced.

554073

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