C - Chemistry – Metallurgy – 07 – F
Patent
C - Chemistry, Metallurgy
07
F
C07F 5/00 (2006.01) C07F 3/00 (2006.01) C07F 9/00 (2006.01) C07F 9/50 (2006.01) C30B 25/02 (2006.01)
Patent
CA 2198453
The invention concerns a process for preparing metalorganic compounds and metalorganic amine adducts. A Grignard reagent is prepared and reacted with the metal halide in an amine solvent. The amine used can form a useful adduct with the metalorganic compound produced. Either the metalorganic compound or its amine adduct may be used for growing semiconductor layers by vapor phase epitaxial techniques.
L'invention concerne un procédé de préparation de composés organométalliques et de composés d'addition d'amines organométalliques. On prépare un réactif de Grignard et on le met en réaction avec l'halogénure de métal dans un solvant d'amine. L'amine utilisée peut constituer un composé d'addition efficace avec le composé organométallique obtenu. On peut utiliser soit le composé organométallique, soit son composé d'addition d'amine, afin d'effectuer le tirage de couches de semi-conducteurs au moyen de techniques épitaxiales en phase vapeur.
Freer Richard William
Jones Anthony Copeland
Martin Trevor
Rushworth Simon Andrew
Whittaker Timothy John
Gowling Lafleur Henderson Llp
Secretary Of State For Defence Acting Through His Defence Evaluation And Research Agency
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