Metalorganic vapor phase epitaxial growth of group ii-vi...

Details Metalorganic vapor phase epitaxial growth of group ii-vi... Metalorganic vapor phase epitaxial growth of group ii-vi...

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/02 (2006.01) C30B 29/48 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1287555

30,295 1109-7523 ABSTRACT A process to produce one or more Group II-VI epitaxial layers over a crystalline substrate by direct- ing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: Image wherein R1 and R2 are, independently, hydrogen or C1-C4 alkyl, preferably, hydrogen.

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