Method and apparatus for analog storage using floating gate...

Details Method and apparatus for analog storage using floating gate... Method and apparatus for analog storage using floating gate...

G - Physics

11

C

G11C 11/40 (2006.01) G11C 11/56 (2006.01) G11C 16/04 (2006.01) G11C 27/00 (2006.01)

Patent

CA 2201687

This invention utilizes the small cell size of the NAND storage cell structure in an analog storage and playback device. This is achieved, in part, by using a special, zero current storage cell, in which in the read mode, the cell loading current is waveshaped to attain an optimal dynamic range and to avoid the resistive effects of series parasitic resistances of other transistors in the source node or drain node, and to avoid the transistor conductance variations of all the transistors in the read path. The loading current is waveshaped to reduce possible overshoot and settling effects to achieve the fine output voltage resolution in an optimal sensing time. Details of the method and alternate embodiments are disclosed.

L'invention utilise la structure de cellules de mémoire NON-ET de petite taille dans un dispositif analogique de mémorisation et de lecture. Pour ce faire, elle fait appel, en partie, à une cellule de mémoire spéciale à courant nul, dans laquelle, en mode lecture, le courant de chargement de cellule est mis en forme d'onde pour atteindre une dynamique optimale et éviter les effets résistifs de résistances parasites série d'autres transistors dans le noeud source ou le noeud drain, et éviter aussi les variations de conductance de tous les transistors du chemin de lecture. Le courant de chargement est mis en forme d'onde pour réduire les effets possibles de dépassement et d'établissement de niveau afin d'assurer une tension de sortie de grande précision dans un temps de détection optimal. Les détails de la méthode et d'autres versions de l'invention sont présentés.

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