Method and apparatus for avoiding undesirable deposits in...

Details Method and apparatus for avoiding undesirable deposits in... Method and apparatus for avoiding undesirable deposits in...

B - Operations, Transporting

01

D

148/1.4

B01D 9/00 (2006.01) C30B 15/20 (2006.01)

Patent

CA 1078299

METHOD AND APPARATUS FOR AVOIDING UNDESIRABLE DEPOS ITS IN CRYSTAL GROWING OPERATIONS Abstract of the Disclosure In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide, which sometimes form on the surface of the melt-containing crucible just above the surface of the melt, are avoided by perturbing the formation conditions at the region of probable formation. Such perturbations may include increasing the temperature of the crucible at the region of probable formation. The increase in temperature may be provided by including an aperture in the housing which surrounds and supports the crucible to enable locally greater radiative heating of the crucible in the region of probable formation. Other expendients for locally increasing the temperature of the crucible include, without limitation, selective frosting and other techniques for locally changing the emissivity characteristics of the crucible and/or the surrounding material. - i -

290434

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