Method and apparatus for avoiding undesirable deposits in...

Details Method and apparatus for avoiding undesirable deposits in... Method and apparatus for avoiding undesirable deposits in...

H - Electricity

01

L

356/116, 356/178

H01L 21/02 (2006.01) C30B 15/20 (2006.01)

Patent

CA 1090479

Abstract of the Disclosure In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide sometimes form on the surface of the melt-containing crucible just above the initial level of the melt. These formations are avoided by perturbing chemical formation conditions at the region of probable formation. Such perturbations may be provided by a tube through which either a positive pressure of a gas, such as argon, is directed toward the region of probable formation or through which a negative pressure may be applied to perturb the formation conditions.

291014

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