C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
204/96.03
C30B 35/00 (2006.01) C23C 15/00 (1980.01)
Patent
CA 1037901
ABSTRACT In a vacuum system for subjecting a workpiece such as a semiconductor substrate to a beam of energy, for example as in cathodic sputtering, temperature rise of the workpiece is inhibited by mounting the workpiece in minimal thermal contact with the support structure, and orienting it so that the back surface of the workpiece, that is, the face opposite to that upon which the energy beam impinges, is directed to a black body or low temperature portion of the vacuum chamber. In combination with this technique, the back surface is suitable treated to increase its emissivity such as, for example, by applying thereto a black coating.
219189
Nevis Benjamin E.
Tisone Thomas C.
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