H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/78 (2006.01) B28D 5/00 (2006.01)
Patent
CA 2115744
2115744 9304497 PCTABS00020 A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing, e.g., by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.
Chen Elik
Kaufman Kalman
Mazor Isaac
Smith Colin
Vilenski Dan
Barrigar & Moss
Sela Semiconductor Engineering Laboratories
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