Method and apparatus for cylindrical magnetron sputtering...

C - Chemistry – Metallurgy – 23 – C

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C23C 14/34 (2006.01) C23C 14/35 (2006.01) H01J 37/34 (2006.01)

Patent

CA 2624542

A cylindrical cathode target assembly for use in sputtering target material onto a substrate comprises a generally cylindrical target (30) , means for rotating the target about its axis during a sputtering operation, a magnetic array (80) carried within the target for generation of a plasma-containing field including a plurality of electron drift paths adjacent an outer surface of the target, and a device for supporting the magnetic array (80) independently of rotation of the target . In certain embodiments of the invention, the magnetic array may include a plurality of magnetic elements (540) arranged to form a plurality of electron drift paths spaced along a substantial length of the target to promote generally uniform film deposition and uniform target utilization along its length.

Selon l'invention, un ensemble cible cathode cylindrique destiné à être utilisé avec un matériau cible de pulvérisation sur un substrat comprend une cible sensiblement cylindrique, un moyen permettant de faire tourner la cible autour de son axe pendant l'opération de pulvérisation, un réseau magnétique disposé dans la cible afin de générer un champ contenant du plasma comprenant une pluralité de voies de courant d'électrons adjacentes à une surface extérieure de la cible et un dispositif permettant de supporter le réseau magnétique indépendamment de la rotation de la cible. Dans certains modes de réalisation, le réseau magnétique peut comprendre une pluralité d'éléments magnétiques disposés de façon à former une pluralité de voies de courant d'électrons espacées sur une longueur substantielle de la cible afin de promouvoir un dépôt de film sensiblement uniforme et une utilisation uniforme de la cible sur toute sa longueur.

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