C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/50 (2006.01)
Patent
CA 2204164
The present invention is directed to an apparatus and its method of use in which a substance such as diamond is deposited on a mandrel (110) or substrate (170), and where temperature at the deposition surface is controlled. According to one aspect of the invention, the temperature on the surface of a rotating mandrel (110) is controlled by passing coolant fluid radially through the mandrel at several angular reference positions in the mandrel, while a plasma containing, e.g., a hydrocarbon gas and hydrogen gas is directed toward the mandrel. A spacer (120) having a thermal conductance in its thickness direction that varies with its radial direction is mounted on the mandrel, and a substrate (170) is mounted on the spacer (120).
Cette invention concerne un appareil et son procédé d'utilisation selon lequel une substance telle que du diamant est déposée sur un mandrin (110) ou un substrat (170) et selon lequel la température est régulée au niveau de la surface où s'est effectué le dépôt. Selon un aspect de l'invention la température à la surface du mandrin rotatif (110) est régulée par le passage d'un fluide de refroidissement qui traverse le mandrin au niveau de plusieurs positions de référence angulaire dans le mandrin, pendant qu'un plasma contenant, par exemple, un hydrocarbure gazeux et de l'hydrogène gazeux est dirigé vers ledit mandrin. Un élément d'intercalation (120) dont la conductance thermique dans le sens de son épaisseur varie avec son sens radial est monté sur le mandrin, et un substrat (170) est monté sur l'élément d'intercalation (120).
Bak-Boychuk Gregory
Heuser Michael S.
Quirk William A.
Raney Daniel V.
Shepard Cecil B. Jr.
Celestech Inc.
Goudreau Gage Dubuc
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