C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.08, 204/1
C23C 14/34 (2006.01)
Patent
CA 1192860
ABSTRACT OF THE DISCLOSURE There is described a method and an apparatus for depositing oxide, such as zinc oxide, on a substrate by R.F. magnetron sputtering. The oxide deposit is "switched" from a non-conducting to a highly conducting material by a second discharge caused by a voltage applied to a screen grid immediately in front of the substrate, or is rendered conducting by a heating step.
461115
Buchanan Margaret A.
Webb James B.
Williams Digby F.
As Represented By The Ministe R. Of The National Research Counci Her Majesty The Queen In Right Of Canada
R. William Wray & Associates
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