C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.08, 204/1
C23C 14/34 (2006.01) C03C 17/245 (2006.01) C23C 14/08 (2006.01) C23C 14/54 (2006.01) H01B 1/08 (2006.01) H01J 37/34 (2006.01)
Patent
CA 1184877
ABSTRACT OF THE DISCLOSURE There is described a method and an apparatus for depositing oxide, such as zinc oxide, on a substrate by R.F. magnetron sputtering. The oxide deposit is "switched" from a non-conducting to a highly conducting material by a second discharge caused by a voltage applied to a screen grid immediately in front of the substrate, or is rendered conducting by a heating step.
402706
Buchanan Margaret A.
Webb James B.
Williams Digby F.
National Research Council Of Canada
R. William Wray & Associates
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