Method and apparatus for doping semiconductors in centrifuge

Details Method and apparatus for doping semiconductors in centrifuge Method and apparatus for doping semiconductors in centrifuge

C - Chemistry, Metallurgy

30

B

356/116, 148/2.8

C30B 1/00 (2006.01) C30B 31/02 (2006.01) H01L 21/223 (2006.01) H01L 21/24 (2006.01)

Patent

CA 1053130

ABSTRACT A semiconductor material is doped or alloyed under vacuum with an impurity by thermal decomposition and by sedimentation resulting from centrifugal force. The doping material is alternatively applied by evap- oration before being subjected to centrifugal force and may be heated up to the melting point before completion of the centrifugal action. A centrifuge is provided having a thermal insulating layer between the outer wall of a rotor and a support for basic semicon- ductor material to be doped. The doping impurity material to be evaporated onto the basic solid state material is placed in the center of the centrifuge rotor.

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