Method and apparatus for enhancing the depth of focus in...

Details Method and apparatus for enhancing the depth of focus in... Method and apparatus for enhancing the depth of focus in...

H - Electricity

01

L

356/177

H01L 21/027 (2006.01) G03F 1/14 (2006.01) G03F 7/20 (2006.01)

Patent

CA 2037705

ABSTRACT OF THE INVENTION METHOD AND APPARATUS FOR ENHANCING THE DEPTH OF FOCUS IN PROJECTION LITHOGRAPHY The invention provides a technique which enables projection lithography to extend to the sub-half micron range by compensating the Depth of Focus (DOF) budget lost in substrate topography with a projection of a non-planar image which is conformal to the substrate. The method of achieving a non-planar image field includes the formation of a mask reticle which is a replica of the surface of the semiconductor to be exposed, thus, eliminating substrate topography from the optical DOF budget.

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