Method and apparatus for epitaxially growing a material on a...

Details Method and apparatus for epitaxially growing a material on a... Method and apparatus for epitaxially growing a material on a...

C - Chemistry, Metallurgy

30

B

C30B 25/14 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2373170

A method of epitaxially growing a material on a substrate (1). The method comprises separately heating precursors to their respective decomposition temperatures at or adjacent a region of the substrate to generate species which are supplied separately to the region and which combine at the region.

L'invention concerne un procédé permettant de générer une croissance épitaxiale d'un matériau sur un substrat (1). Ce procédé consiste à chauffer séparément des précurseurs à leur température de décomposition respective dans une région ou à proximité d'une région du substrat, de manière à générer des espèces qui sont apportées séparément dans cette région et qui se combinent ensuite dans cette dernière.

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